This document describes the features and characteristics of the NPN Silicon RF Power Transistor UHBS30-2, which is suitable for high-frequency applications.
The ASI UHBS30-2 is an NPN silicon RF power transistor designed for specific applications. It utilizes the Omnigold™ Metalization System and is housed in a 2306L FLG package style.
Key electrical characteristics include a maximum collector current (Ic) of 9.0A and a power dissipation (Pd) of 100W at a temperature of 25°C. The device operates within a junction temperature range of -65°C to +150°C.
| Package Style | 2306L FLG |
|---|---|
| Metalization System | Omnigold™ |
| Collector-Emitter Breakdown Voltage (BVceo) | 30 V |
| Input Capacitance (Cob) | 50 pF |
The maximum power dissipation is 100 W at 25 °C.