This datasheet is about the specifications of ASI ULBM35, including BVCEO IC, BVCES IC, BVEBO IE, ICES VCE, hFE VCE, Cob VCB, PG, ηηC, IC, VCBO, VCEO, VEBO, PDISS, TJ, TSTG, θθJC
The ASI ULBM35 is an NPN silicon RF power transistor designed for high-frequency applications. It features the Omnigoid™ Metalization System and is packaged in a .500 6L FLG style.
The document provides maximum ratings including a collector current of 6.0A and a maximum junction temperature of +200 °C. Key electrical characteristics include a collector-emitter breakdown voltage of 16V and a power dissipation of 35W at 470 MHz.
| Package Style | .500 6L FLG |
|---|---|
| Storage Temperature (Tsta) | -65 °C to +150 °C |
| Collector-Emitter Breakdown Voltage | 16 V |
| Collector-Base Breakdown Voltage | 36 V |
| Collector-Base Emitter Breakdown Voltage | 4.0 V |
| Collector Cut-off Current | 5 mA |
| Current Gain (hfe) | 20 |
| Input Capacitance (Cob) | 110 pF |
| Power Gain (Gp) | 6.0 dB |
The typical power gain is 6.0 dB when the frequency is 470 MHz.
The device can be stored between -65 °C and +150 °C.