The document describes the features and characteristics of the ASI ULBM5SL product, including maximum operating current, maximum operating voltage, and maximum power dissipation.
This document is a datasheet for the ASI ULBM5SL, an NPN silicon RF power transistor designed for specific applications. The device features the Omnigold™ Metalization System and is packaged in a .280 4L Stud style.
The datasheet provides maximum ratings such as a collector current of 17A and a collector-emitter voltage of 16V. It also lists key electrical characteristics including breakdown voltages, current gains, and capacitance values at various test conditions.
| Package Style | .280 4L STUD |
|---|---|
| Maximum Collector-Emitter Voltage | 16 V |
| Maximum Power Dissipation | 15 W |
| Operating Temperature Range | -65 °C to +150 °C |
| DC Current Gain (hFE) | 10 to 100 |
| Input Capacitance | 22 pF |
The ASI ULBM5SL is designed for use as an NPN silicon RF power transistor.
The maximum power dissipation is 15 W at a temperature of 25°C.