The UHBS30-1 is a NPN silicon RF power transistor with maximum ratings of 9.0 A, 50 V, 30 V and 4.0 V. It features Omnigold™ metalization system, 6L FLG package and 1.5 OC/W thermal resistance.
This document is a datasheet for the ASI UHBS30-1, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It provides comprehensive technical data including maximum ratings, electrical characteristics, and physical package dimensions.
| Collector-Emitter Voltage (Vceo) | 50 V |
|---|---|
| Collector-Base Voltage (Vcbo) | 30 V |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 4.0V |
| Power Dissipation (Pd) | 100 W @Tc = 25°C |
| Operating Junction Temperature (Tj) | -65 °C to +200 °C |
| Storage Temperature (Tstg) | -65 °C to +150 °C |
| Thermal Resistance (RthJC) | 1.5 °C/W |
| Collector-Base Breakdown Voltage (BVcbo) | 30 V |
| Collector-Emitter Breakdown Voltage (BVceo) | 50 V |
| Collector-Base Cutoff Current (Icbo) | 5 mA |
| Collector-Emitter Cutoff Current (Ices) | 10 mA |
| Package Style | .2306L FLG |
The ASI UHBS30-1 is an NPN silicon RF power transistor.
The device dissipates a maximum of 100 W when the case temperature is 25°C.