This datasheet provides information on the characteristics, maximum ratings, package style, order code, etc. of the MLN2033F RF power transistor.
The ASI MLN2033F is an NPN silicon RF power transistor designed for high-frequency applications. It features the Omnigold™ Metalization System and is available in a .250 2L FLG package style with order code ASI10624.
Key electrical characteristics include a collector-base breakdown voltage (BVCBO) of 40 V, a collector-emitter breakdown voltage (BVCEO) of 25 V, and a maximum power dissipation (PDISS) of 20.6 W at a case temperature of 25°C.
| Product Type | NPN SILICON RF POWER TRANSISTOR |
|---|---|
| Metalization System | Omnigold™ |
| Collector-Base Breakdown Voltage (BVCBO) | 40 V |
| Collector-Emitter Breakdown Voltage (BVCEO) | 25 V |
| Emitter-Base Breakdown Voltage (BVEBO) | 3.5 V |
| Power Dissipation (PDISS) | 20.6 W |
| Operating Junction Temperature (TJ) | -65°C to +200°C |
| Storage Temperature (TSTG) | -65°C to +150°C |
| Thermal Resistance (θJC) | 17°C/W |
| Package Style | .250 2L FLG |
| Order Code | ASI10624 |
The maximum collector current rating is 0.5 A.
The typical power output is 2.0 W when VCE is 18 V and ICQ is 220 mA.
The junction temperature range is from -65 OC to +200 OC.