The data table provides the specifications of ASI MLN1027S, including maximum current, maximum voltage, maximum power, minimum power, minimum current, etc.
The document describes the ASI MLN1027S, an NPN silicon RF power transistor designed with the Omnigoid™ Metalization System. It is packaged in a .260 4L Stud style.
Key specifications include a maximum collector-emitter voltage (Vceo) of 28 V and a power dissipation rating of 7.0 W at 25 °C. The device operates over a temperature range from -65 °C to +150 °C.
| Package Style | .260 4L STUD |
|---|---|
| Metalization System | Omnigoid™ |
| Collector Current (Ic) | 0.250 A |
| Collector-Base Voltage (Vcb) | 40 V |
| Collector-Emitter Voltage (Vceo) | 28 V |
| Emitter-Base Voltage (Vebo) | 3.5 V |
| Power Dissipation (Pdiss) | 7.0 W @ Te = 25 °C |
| Operating Temperature Range | -65 °C to +150 °C |
The ASI MLN1027S is designed for use as an NPN silicon RF power transistor.
The maximum power dissipation is 7.0 W at a temperature of 25 °C.
The operating temperature range is from -65 °C to +150 °C.