This data sheet mainly introduces the characteristics, maximum ratings, package and external dimensions of ASI HF250-50.
This document is a datasheet for the ASI HF250-50, an NPN Silicon RF Power Transistor designed by Advanced Semiconductor, Inc. The device features the Omnigold™ Metalization System and is intended for high-power radio frequency applications.
Key specifications include a maximum collector current (Ic) of 40 A and a power dissipation (Poiss) of 140 W at an ambient temperature of 25 °C. The operating temperature range spans from -65 °C to +200 °C, with storage temperatures ranging from -65 °C to +150 °C.
| Power Dissipation (Poiss) @ Tg = 25 °C | 140 W |
|---|---|
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range (Tst) | -65 °C to +150 °C |
| Thermal Resistance (8uc) | 0.40 c/w |
| Collector-Emitter Breakdown Voltage (BVceo) | 55 V |
| Collector-Base Breakdown Voltage (BVces) | 110 V |
The ASI HF250-50 is an NPN silicon RF power transistor.
The device provides a minimum gain of 14 dB at 220 W and 30 MHz.
The device operates from -65 °C to +200 °C.