This is the datasheet for the MLN1027SS from Advanced Semiconductor Inc. It is a NPN Silicon RF Power Transistor with a maximum VCE of 35V and a maximum IC of 10A.
The ASI MLN1027SS is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. The document outlines its maximum ratings and electrical characteristics at 25°C.
Key specifications include a collector current (Ic) of 10A, a collector-emitter breakdown voltage (BVceo) of 35V, and a power dissipation (Pdiss) of 140W. The device is housed in a TO-205 stud package.
| Collector-Emitter Breakdown Voltage (BVceo) | 35 V |
|---|---|
| Emitter-Base Breakdown Voltage (BVebo) | 4.0 V |
| Power Dissipation (Pdiss) @ Tc = 25 °C | 140 W |
| Operating Temperature Range (Tt) | -65 °C to +200 °C |
| Storage Temperature Range (Tste) | -65 °C to +150 °C |
The maximum power dissipation is 140 W at a case temperature of 25 °C.
The storage temperature range is from -65 °C to +150 °C.