The HF220-50 is a NPN Silicon RF Power Transistor designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz.
The ASI HF220-50 is an NPN silicon RF power transistor designed for high linearity Class AB power amplifier applications operating up to 30 MHz. Key features include a typical power gain of 14 dB at 220 W/30 MHz and an intermodulation distortion (IMD3) of -32 dBc typical at 220 W PEP. The device utilizes the Omnigold™ Metalization System.
| Frequency Range | up to 30 MHz |
|---|---|
| Power Gain | 14 dB Typical |
| Collector-Emitter Voltage | 110 V |
| Operating Temperature | -65 °C to +200 °C |
| Storage Temperature | -65 °C to +150 °C |
The transistor is designed for applications up to 30 MHz.
The typical power gain is 14 dB.