This file is the datasheet of ASI HF150-50S, which introduces the characteristics and parameters of the product.
This document is a datasheet for the ASI HF150-50S, an NPN silicon RF power transistor designed for a .500 4L stud package style. The device features the Omnigold™ Metalization System and is rated for a minimum power gain of 14dB at 150W/30MHz.
| Collector-Emitter Voltage (Vceo) | 55V |
|---|---|
| Power Gain (Gp) | 14 dB |
| Intermodulation Distortion (IMD) | -30 dBc |
The ASI HF150-50S is an NPN silicon RF power transistor.
The minimum gain is 14 dB.