The document provides information about the features and characteristics of the ASI TVU002, including minimum, typical, and maximum values for parameters such as current, voltage, power dissipation, etc.
The ASI TVU002 is an NPN silicon RF power transistor designed in a .280 4L stud package. It features the Omnigold™ Metalization System and is manufactured by Advanced Semiconductor, Inc.
Key specifications include a collector-emitter voltage (Vceo) of 25 V typical and a maximum power dissipation of 15.9 W at 25°C. The device operates with a current gain cutoff frequency (fT) up to 860 MHz.
| Package Style | .280 4L STUD |
|---|---|
| Metalization System | Omnigold™ |
| Collector Current (Ic) | 800 mA |
| Collector-Emitter Voltage (Vceo) | 25 V |
| Power Dissipation (Pd) | 15.9 W @ To = 25°C |
| Operating Temperature Range | -65 °C to +200 °C |
The ASI TVU002 is an NPN silicon RF power transistor.
It uses a .280 4L stud package style.
The maximum collector current (Ic) is 800 mA.