This data sheet lists the characteristics of ASI MLN1027SL, including BVCBO, BVCEO, BVEBO, ICBO, hFE, COB, PG, etc.
The ASI MLN1027SL is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It is available in a .280 4L Pill package style.
Key electrical characteristics include a maximum collector-emitter voltage (Vceo) of 28 V and a maximum collector-base voltage (Vcbo) of 40 V. The device supports a continuous drain current (Ic) of up to 0.250 A.
| Package Style | .280 4L Pill |
|---|---|
| Collector Current (Ic) | 0.250 A |
| Power Dissipation (Poiss) | 7.0 W @ Tc = 25 °C |
| Operating Temperature Range (Tt) | -65 °C to +200 °C |
| Storage Temperature Range (Tste) | -65 °C to +150 °C |
The ASI MLN1027SL is an NPN silicon RF power transistor designed for specific applications.
The maximum power dissipation is 7.0 W when the case temperature is 25 °C.
The operating temperature range is from -65 °C to +200 °C.