ASI HF150-50F is an NPN silicon RF power transistor with a minimum PG of 14 dB, maximum output power of 150 W/30 MHz, and maximum IMD3 of 100 dBc.
The document describes the ASI HF150-50F, an NPN Silicon RF Power Transistor designed with the Omnigold™ Metalization System. It is manufactured by Advanced Semiconductor, Inc., located in North Hollywood, California.
Key specifications include a maximum power dissipation of 233 W at 25°C and a collector-emitter breakdown voltage (BVceo) of 110 V. The device operates within a junction temperature range of -65 °C to +200 °C.
| Package Style | .500 4L FLG |
|---|---|
| Power Dissipation (Poiss) | 233 W @ To = 25°C |
| Collector-Emitter Breakdown Voltage (BVceo) | 110 V |
| Current Gain (Gp) | 14 dB min. |
| Junction Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
The order code for the ASI HF150-50F is ASI10612.
Yes, it utilizes the Omnigold™ Metalization System.