The AVD250 is a NPN silicon RF power transistor produced by ASI. Its maximum current is 17.8 A, maximum voltage is 55 V, and maximum power is 600 W. The transistor has input matching network and Omnigold™ metallization system features.
The ASI AVD250 is an NPN silicon RF power transistor designed with an input matching network and Omnigoid™ Metalization System. It is packaged in a .400 2NL FLG style package.
Maximum ratings for the device include a collector current (Ic) of 178A, a collector-emitter voltage (Voc) of 55V, and a power dissipation (Poiss) of 600 W at a case temperature below 80 °C. The operating junction temperature range is -65 °C to +250 °C.
| Collector Current (Ic) | 178A |
|---|---|
| Collector-Emitter Voltage (Voc) | 55V |
| Power Dissipation (Poiss) | 600 W @ Tc < 80 °C |
| Operating Junction Temperature (Tj) | -65 °C to +250 °C |
| Storage Temperature (Tstg) | -65 °C to +200 °C |
| Thermal Resistance Junction-to-Case (Rthjc) | 0.2 °C/W |
| Package Style | .400 2NL FLG |
The order code is ASI10565.
Yes, it features an input matching network and Omnigoid™ Metalization System.