The AVD150 is a NPN Silicon RF Power Transistor from Advanced Semiconductor. This transistor features an input matching network and the Omnigold™ Metalization System. The maximum ratings are IC 11 A, VCC 55 V, PDISS 400 W @ TC = 25 OC, TJ -65 OC to +250 OC and TSTG -65 OC to +200 OC.
This document is a technical datasheet for the ASI AVD150, an NPN silicon RF power transistor. It specifies that the device utilizes the Omnigold™ Metalization System and comes in a .400 2NL FLG package style with a lead angle of 0.25 x 45°.
The datasheet provides maximum ratings including a collector-emitter voltage (Vceo) of 65 V, an operating temperature range from -65 °C to +175 °C, and a thermal resistance (RthetaJC) of 0.3 °C/W. It also lists key electrical characteristics such as breakdown voltages for various conditions and capacitance values.
| Package Style | .400 2NL FLG |
|---|---|
| Lead Angle | 0.25 x 45° |
| Collector-Emitter Voltage (Vceo) | 65 V |
| Operating Temperature Range | -65 °C to +175 °C |
| Storage Temperature Range | -65 °C to +200 °C |
| Thermal Resistance (RthetaJC) | 0.3 °C/W |
The typical capacitance is 80 pF when the voltage is 28 V.