This document describes the features and characteristics of the ASI AVD090P NPN silicon RF power transistor.
The ASI AVD090P is an NPN silicon RF power transistor designed for use in the 1025-1150MHz frequency range. It features the Omnigold™ Metalization System and is packaged in a .280 4L Pill (A) style.
The document lists maximum ratings including a collector current of 6.5 A peak, a collector-emitter voltage of 55 V, and a power dissipation of 90 W. Key electrical characteristics include a minimum DC current gain (hFE) of 10 at 5.0 V and 1.0 A.
| Package Style | .280 4L Pill (A) |
|---|---|
| Frequency Range | 1025-1150MHz |
| Collector Current (Peak) | 6.5 A |
| Collector-Emitter Voltage | 55 V |
| Operating Temperature | -65 °C to +200 °C |
The ASI AVD090P is designed for use as an NPN silicon RF power transistor.
The maximum peak collector current is 6.5 A.
The maximum power dissipation is 90 W.