This document is a technical datasheet for the Toshiba 1SS388, a silicon epitaxial Schottky barrier type diode designed for high-speed switching applications. Key features include low forward voltage (typical 0.54V) and low reverse current (typical 5µA). The device is housed in a small package measuring 0.6mm height with specific mounting requirements on a glass epoxy circuit board.
| Reverse Voltage (VR) | 40 V |
|---|---|
| Maximum Peak Forward Current (IFM) | 300 mA |
| Average Forward Current (IO) | 100 mA |
| Surge Current (10ms) (Ipsm) | 1 A |
| Power Dissipation (PX) | 150 mW |
| Forward Voltage (VF) at Ip=50mA | Typ. 0.60 V |
| Reverse Current (IR) at VR=10V | Max. 5 µA |
The typical forward voltage is 0.60 V when the current is 50 mA.