This datasheet details the Toshiba 1SS379 silicon epitaxial planar diode, designed for general-purpose rectifier applications. It specifies maximum ratings such as 85V reverse voltage and 300mA peak forward current. Electrical characteristics include a typical forward voltage of 1.0V and total capacitance of 3.0pF. The device is packaged in a SC-59 case and rated for junction temperatures up to 125°C.
Graphs illustrate forward voltage vs. current, capacitance vs. reverse voltage, and power dissipation vs. ambient temperature, aiding in circuit design and thermal management.
| Maximum Reverse Voltage | 85 V |
|---|---|
| Average Forward Current | 100 mA |
| Forward Voltage | 1.0 V (Typ.) |
| Total Capacitance | 3.0 pF (Typ.) |
| Package Type | SC-59 |
| Junction Temperature | 125 °C |
The maximum reverse voltage rating is 85V.
The typical forward voltage is 1.0V.
The package type is SC-59.
The maximum junction temperature rating is 125°C.