Toshiba 1SS361F Silicon Epitaxial Planar Diode Datasheet


Toshiba 1SS361F Silicon Epitaxial Planar Diode Datasheet - cover page
Brand
Toshiba
Category
diode
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
115 KB
Published
07 June, 2012
Updated
07 June, 2012
MD5 checksum
94FEBCE9FFFC85B833D6D67396829AF6

About this manual

This datasheet provides electrical characteristics and maximum ratings for the Toshiba 1SS361F silicon epitaxial planar diode. It includes forward voltage, reverse recovery time, and capacitance specifications. The document also contains test circuit diagrams and graphs illustrating performance under various conditions. Toshiba advises users to operate the device within specified ranges to ensure safety and reliability.

What's inside

  • Electrical Characteristics
  • Maximum Ratings
  • Test Circuit Diagram
  • Performance Graphs

Specifications

Maximum Reverse Voltage85 V
Average Forward Current100 mA
Forward Voltage (100mA)0.90 V
Reverse Recovery Time1.6 ns
Total Capacitance0.9 pF

Frequently asked questions

What is the maximum reverse voltage rating for the 1SS361F?

The maximum reverse voltage rating is 85 V.

What is the forward voltage at 100mA?

The forward voltage at 100mA is 0.90 V.

What is the reverse recovery time?

The reverse recovery time is 1.6 ns.

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