Toshiba 1SS387 Silicon Epitaxial Planar Diode Datasheet


Toshiba 1SS387 Silicon Epitaxial Planar Diode Datasheet - cover page
Brand
Toshiba
Category
Diode Bridge Controller
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
119 KB
Published
07 June, 2012
Updated
07 June, 2012
MD5 checksum
83ED84C3A068A7137801EE68DE45A853

About this manual

This document is a datasheet for the Toshiba 1SS387, an ultra high speed switching silicon epitaxial planar type diode. It highlights key features including small package size, low forward voltage of 0.98V typical, fast reverse recovery time of 1.6ns typical, and small total capacitance of 0.5pF typical.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Reverse Recovery Time Test Circuit
  • Equivalent Circuit

Specifications

Forward Voltage (Typical)0.98V
Reverse Recovery Time (Typical)1.6ns
Total Capacitance (Typical)0.5pF
Maximum Peak Reverse Voltage85 V
Average Forward Current100 mA
Surge Current (10ms)1 A

Frequently asked questions

What is the typical forward voltage of this diode?

The typical forward voltage is 0.98V.

What is the maximum peak reverse voltage rating?

The maximum peak reverse voltage is 85 V.

How fast is the typical reverse recovery time?

The typical reverse recovery time is 1.6ns.

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