This document is a technical datasheet for the TOSHIBA 1SS383, which is a silicon epitaxial Schottky barrier type diode. The device consists of two independent diodes in a small package designed for low voltage high speed switching applications.
The datasheet provides maximum ratings including a peak reverse voltage of 45V and an average forward current of 100mA per unit. It also lists typical electrical characteristics such as a forward voltage drop of 0.54V at 100mA and a total capacitance of up to 25pF.
| Maximum (Peak) Reverse Voltage | 45 V |
|---|---|
| Reverse Voltage | 40 V |
| Maximum (Peak) Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Surge Current (10ms) | 1 A |
| Power Dissipation | 100 mW |
| Junction Temperature | 125 °C |
| Operation Temperature Range | -40~100 °C |
It is a silicon epitaxial Schottky barrier type diode composed of two independent units.
The maximum peak reverse voltage is 45 V, and the maximum peak forward current is 300 mA.
The typical forward voltage is 0.54 V when the current is 100 mA.