This document is a datasheet for the Toshiba 1SS378, a silicon epitaxial planar Schottky barrier diode. It details electrical characteristics such as forward voltage, reverse voltage, and current ratings. The diode is designed for high-speed switching applications and is packaged in a small SC-70 case. Operating temperature ranges from -40°C to 100°C, with a junction temperature limit of 125°C.
| Maximum Reverse Voltage | 15 V |
|---|---|
| Average Forward Current | 100 mA |
| Forward Voltage | 0.23 V (Typ.) @ Ip=5mA |
| Package Type | SC-70 |
| Junction Temperature | 125 °C |
The maximum reverse voltage rating is 15 V.
The forward voltage is 0.23 V (typical) at 5mA.
The operating temperature range is -40°C to 100°C.