This document provides electrical ratings and characteristics for the Toshiba 1SS377 silicon epitaxial Schottky barrier diode. It includes maximum ratings such as reverse voltage (10V), forward current (100mA), and power dissipation (150mW). The datasheet also details electrical characteristics like forward voltage (0.23V at 5mA) and reverse current (20µA at 10V). The device is packaged in a SC-59 case and is designed for high-speed switching applications.
The datasheet includes graphs showing forward voltage vs. reverse voltage and reverse current vs. temperature, along with equivalent circuit diagrams. It also contains standard disclaimers regarding product reliability and usage within specified operating ranges.
| Maximum Reverse Voltage | 10 V |
|---|---|
| Average Forward Current | 100 mA |
| Forward Voltage | 0.23 V (at 5mA) |
| Reverse Current | 20 µA (at 10V) |
| Package Type | SC-59 |
The maximum reverse voltage rating is 10V.
The forward voltage at 5mA is 0.23V.
The 1SS377 is in an SC-59 package.