This datasheet details the electrical characteristics and maximum ratings for the Toshiba 1SS360F silicon epitaxial planar diode. It includes forward voltage, reverse recovery time, total capacitance, and maximum ratings such as reverse voltage and forward current. The document also includes test circuits and graphs for reverse recovery time and voltage-current characteristics.
The diode is designed for ultra high speed switching applications and is packaged in a 1608 flat lead format. Toshiba provides specifications and precautions for safe usage, including operating temperature ranges and reliability guidelines.
| Maximum Reverse Voltage | 85 V |
|---|---|
| Average Forward Current | 100 mA |
| Reverse Recovery Time | 1.6 ns (Typ.) |
| Forward Voltage (100mA) | 0.92 V |
The typical reverse recovery time is 1.6 ns.
The typical forward voltage is 0.92 V.