This datasheet details the Toshiba 1SS360, a silicon epitaxial planar diode designed for ultra high speed switching applications. It features a low forward voltage of 0.92V (typical at 100mA), fast reverse recovery time of 1.6ns (typical), and small total capacitance of 2.2pF (typical). The diode is rated for a maximum reverse voltage of 85V and a maximum forward current of 300mA (peak). Electrical characteristics and test conditions are provided for various operating temperatures, including Ta=25°C and Ta=100°C. Graphs illustrate forward voltage, reverse voltage, capacitance, and reverse recovery time versus current or voltage. Maximum ratings include junction temperature up to 125°C and storage temperature from -55°C to 125°C.
| Maximum Reverse Voltage | 85 V |
|---|---|
| Reverse Voltage | 80 V |
| Maximum Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Forward Voltage (100mA) | 0.92 V |
| Reverse Recovery Time | 1.6 ns |
| Total Capacitance | 2.2 pF |
| Junction Temperature | 125 °C |
The forward voltage at 100mA is 0.92V (typical).
The reverse recovery time is 1.6ns (typical) at 10mA.
The maximum reverse voltage is 85V.