This datasheet provides electrical specifications for the Toshiba 1SS357, a silicon epitaxial Schottky barrier diode. It includes maximum ratings such as reverse voltage (80V), forward current (100mA average), and junction temperature (125°C). Electrical characteristics like forward voltage and reverse current are also listed. The document includes graphs showing capacitance and current vs. voltage at different temperatures.
| Maximum Reverse Voltage | 80 V |
|---|---|
| Average Forward Current | 100 mA |
| Junction Temperature | 125 °C |
| Reverse Current (40V) | 5 µA |
| Total Capacitance (1MHz) | 18–25 pF |
The maximum reverse voltage is 80 V.
The junction temperature rating is 125 °C.