This document is a datasheet for the Toshiba 188384, a low voltage high speed switching diode composed of two independent units. It provides maximum ratings and electrical characteristics including forward voltage, reverse current, and capacitance at specific test conditions.
The datasheet includes pin assignment diagrams, marking information, and typical performance curves such as Forward Voltage vs Current and Capacitance vs Reverse Voltage.
| Reverse Voltage (VR) | 10 V |
|---|---|
| Average Forward Current (Io) | 100 mA |
| Surge Current (IFSM) | 1 A |
| Power Dissipation (P) | 100 mW |
| Junction Temperature (Tj) | 125 °C |
| Operating Temperature Range (Topr) | -40~100 °C |
| Forward Voltage Typ. | 0.23 V |
It is a silicon epitaxial Schottky barrier type diode designed for low voltage and high speed switching.
The device has a maximum peak reverse voltage of 10 V and a maximum peak forward current of 200 A.
The typical forward voltage is 0.23 V when the current is 5 mA.