This datasheet provides electrical and thermal specifications for the Toshiba 1SS367 silicon epitaxial Schottky barrier diode. It details maximum ratings such as reverse voltage (10V), forward current (100mA), and junction temperature (125°C). Electrical characteristics like forward voltage (0.23V at 5mA) and reverse current are also listed. The document includes graphs showing forward voltage versus reverse voltage and capacitance versus reverse voltage at various temperatures.
| Reverse Voltage | 10V |
|---|---|
| Maximum Forward Current | 200 mA |
| Average Forward Current | 100 mA |
| Forward Voltage at 5mA | 0.23V |
| Reverse Current at 10V | 20 µA |
| Total Capacitance at 1MHz | 20–40 pF |
| Junction Temperature | 125°C |
| Storage Temperature Range | -55~125°C |
| Operating Temperature Range | 40~100°C |
The forward voltage is 0.23V at 5mA.
The maximum reverse voltage rating is 10V.
The junction temperature rating is 125°C.
The reverse current at 10V is 20 µA.