This datasheet details the Toshiba 1SS368, a silicon epitaxial planar diode designed for ultra high speed switching applications. It features a low forward voltage of 0.98V (typical) and a fast reverse recovery time of 1.6ns (typical). The diode is rated for a maximum reverse voltage of 85V and a maximum forward current of 200mA. It is suitable for use in circuits requiring high-speed switching and low power dissipation.
The datasheet includes electrical characteristics, maximum ratings, and test conditions at 25°C. It also provides graphical data for forward voltage vs. forward current and reverse voltage vs. reverse current, as well as capacitance and reverse recovery time curves. The document was published on May 7, 1997.
| Maximum Reverse Voltage | 85V |
|---|---|
| Reverse Voltage | 80V |
| Maximum Forward Current | 200mA |
| Average Forward Current | 100mA |
| Surge Current (10ms) | 1A |
| Power Dissipation | 150mW |
| Junction Temperature | 125°C |
| Reverse Current | 0.5µA |
| Total Capacitance | 0.5pF |
| Reverse Recovery Time | 1.6ns |
The maximum reverse voltage is 85V.
The reverse recovery time is 1.6ns.
The junction temperature rating is 125°C.