This datasheet details the Toshiba 1SS372, a silicon epitaxial Schottky barrier diode. It specifies maximum ratings such as reverse voltage (10V), forward current (100mA), and junction temperature (125°C). Electrical characteristics include forward voltage (0.23V at 5mA) and reverse current (20µA at 10V). The device is packaged in a small SC-70 format and is intended for high-speed switching applications.
The document also includes graphs showing forward voltage vs. reverse voltage and capacitance vs. reverse voltage, along with a note on usage precautions and reliability guidelines from Toshiba Corporation.
| Forward Voltage (5mA) | 0.23 V |
|---|---|
| Junction Temperature | 125 °C |
0.23 V (typical).
125 °C.