This datasheet details the Toshiba 1SS373, a silicon epitaxial Schottky barrier diode designed for high-speed switching applications. It specifies maximum ratings such as reverse voltage (10V), forward current (100mA average), and junction temperature (125°C). Electrical characteristics include forward voltage (0.23V at 5mA) and reverse current (20µA at 10V). The device is packaged in a small form factor suitable for surface-mount applications on glass epoxy boards.
| Reverse Voltage | 10 V |
|---|---|
| Average Forward Current | 100 mA |
| Forward Voltage | 0.23 V |
| Reverse Current | 20 µA |
| Junction Temperature | 125 °C |
The maximum reverse voltage rating is 10V.
The typical forward voltage at 5mA is 0.23V.
The operating temperature range is -40°C to 100°C.