This datasheet provides electrical specifications and maximum ratings for the Toshiba 1SS369, a silicon epitaxial Schottky barrier diode. It includes forward and reverse voltage characteristics, current ratings, and thermal limits. The document also contains application notes and warnings regarding safe usage and reliability.
The diode is designed for low voltage, high speed switching applications with a low forward voltage and reverse current. It is packaged in a small form factor suitable for surface mount circuits.
| Forward Voltage (Vf) | 0.54V (TYP.) at 100mA |
|---|---|
| Reverse Current | 5µA (MAX) at 40V |
| Reverse Voltage | 40V |
| Average Forward Current | 100mA |
| Power Dissipation | 150mW |
| Operating Temperature Range | -40~100°C |
The maximum reverse voltage rating is 40V.
The typical forward voltage is 0.54V.
The maximum reverse current is 5µA.
The operating temperature range is -40°C to 100°C.