This datasheet provides electrical specifications for the Toshiba 18S201 silicon epitaxial planar diode, including forward voltage, reverse recovery time, and maximum ratings. It includes test conditions and graphical representations of performance under various parameters. The document also contains legal and usage disclaimers regarding product reliability and application responsibility.
| Maximum Reverse Voltage | 85 V |
|---|---|
| Average Forward Current | 100 mA |
| Reverse Recovery Time | 1.6 ns (Typ.) |
| Total Capacitance | 0.9 pF (Typ.) |
| Junction Temperature | 125 °C |
0.90 V to 1.20 V.
1.6 ns (typical).
200 mW.