This datasheet details the Toshiba 1SS200, a silicon epitaxial planar diode designed for ultra high speed switching applications. It specifies electrical characteristics including forward voltage (0.92V typical at 100mA), reverse recovery time (1.6ns typical), and total capacitance (2.2pF). Maximum ratings include 85V reverse voltage, 300mA peak forward current, and 200mW power dissipation. The document also includes test circuits and graphs for reverse recovery time and voltage-current characteristics.
| Forward Voltage (VF) | 0.92V (Typ.) at 100mA |
|---|---|
| Reverse Recovery Time | 1.6ns (Typ.) |
| Maximum Reverse Voltage | 85V |
| Maximum Forward Current | 300mA (Peak) |
| Power Dissipation | 200mW |
The typical forward voltage is 0.92V at 100mA.
The typical reverse recovery time is 1.6ns.
The maximum reverse voltage rating is 85V.