The 2SC1345(K) is a silicon NPN epitaxial transistor that is used in low frequency low noise amplifiers.
This document is a technical datasheet for the Hitachi 2SC1345(K), a Silicon NPN Epitaxial Transistor designed specifically for low frequency and low noise amplifier applications. The device features a TO-92 package with pinout configurations for Emitter, Collector, and Base terminals.
| Collector to base voltage | 55 V |
|---|---|
| Collector current | 100 mA |
| Collector power dissipation | 200 mW |
| Junction temperature | 150 °C |
| DC current transfer ratio (hFE) | 250 to 1200 |
| Gain bandwidth product | 230 MHz |
The maximum collector power dissipation is rated at 200 mW.
The maximum junction temperature must not exceed 150 °C.
Maximum collector power dissipation decreases as ambient temperature increases, dropping to zero at 200 °C.