2SC1342 is a silicon NPN epitaxial planar transistor primarily used for VHF amplifiers, mixers, and local oscillators.
This document is a technical datasheet for the Hitachi 2SC1342, a Silicon NPN Epitaxial Planar transistor. It specifies that the device is designed for applications such as VHF amplifiers and mixers, including use with local oscillators.
The datasheet provides comprehensive electrical characteristics measured at Ta = 25°C, including absolute maximum ratings like collector to base voltage (30V) and power dissipation (100mW). It also lists typical values for parameters such as DC current transfer ratio, noise figure, gain bandwidth product, and small signal y-parameters across various frequencies.
| Package Type | TO-92 (2) |
|---|---|
| Junction temperature | 150 °C |
The maximum collector power dissipation is rated at 100 mW.
The maximum collector to base voltage is 30 V, and the maximum collector to emitter voltage is 20 V.
The typical gain bandwidth product is 320 MHz.