2SC1344 and 2SC1345 are silicon NPN epitaxial devices used for low frequency low noise amplifier applications. They have low noise figure and high gain bandwidth product.
This document is a technical datasheet for the Hitachi 2SC1344 and 2SC1345 series of Silicon NPN Epitaxial transistors. These devices are specifically designed to function as low frequency, low noise amplifiers.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings such as collector current (100 mA) and power dissipation (200 mW). It details DC parameters like the DC current transfer ratio (hfe), which ranges from 250 to 1200 depending on the specific grade (D, E, or F), and small-signal h-parameters for various operating conditions.
| Device Type | Silicon NPN Epitaxial Transistor |
|---|---|
| Application | Low frequency low noise amplifier |
They are designed to serve as low frequency, low noise amplifiers.
The document identifies these components as intended for use in low frequency low noise amplifiers.
The absolute maximum rating for collector power dissipation is 200 mW.