Hitachi 2SC1345(K) Silicon NPN Epitaxial Transistor Datasheet

2SC1345(K) is a NPN type transistor, which can be used in low frequency low noise amplifiers.


Hitachi 2SC1345(K) Silicon NPN Epitaxial Transistor Datasheet - cover page
Brand
Hitachi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
55 KB
Published
07 June, 2012
Updated
30 September, 2023
Model
2SC1345
MD5 checksum
FA8B6D39DFB9C20163B275713CAAECBB

About this manual

This document is a technical datasheet for the Hitachi 2SC1345(K), which is described as a Silicon NPN Epitaxial Transistor designed for use as a low frequency low noise amplifier. The device features three terminals: Emitter, Collector, and Base.

The datasheet provides comprehensive electrical specifications including absolute maximum ratings such as collector to base voltage (55 V) and junction temperature limits (150°C). It also lists typical electrical characteristics like DC current transfer ratio ranging from 250 to 1200 and a gain bandwidth product up to 230 MHz.

What's inside

  • Outline
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • DC Current Transfer Ratio
  • Gain Bandwidth Product
  • Noise Figure
  • Typical Output Characteristics

Specifications

Collector to base voltage55 V
Collector current100 mA
Junction temperature150 °C
DC current transfer ratio (Min)250
Gain bandwidth product230 MHz

Frequently asked questions

What is the application of the 2SC1345(K)?

It is designed as a low frequency low noise amplifier.

Is the 2SC1345(K) authorized for medical applications?

No, Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without written consent.

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