This document describes the application field and features of 2SJ319(L), 2SJ319(S) Silicon P-Channel MOS FET, including low on-resistance, high speed switching, low drive current, and suitability for switching regulators, DC-DC converters.
This document is a technical datasheet for the Hitachi 2SJ319 series of Silicon P-Channel MOS Field Effect Transistors (MOSFETs). The devices are designed for high-speed power switching applications such as switching regulators and DC-DC converters. Key features include low on-resistance, high speed switching, low drive current requirements, and no secondary breakdown.
| Drain to source voltage | -200 V |
|---|---|
| Gate to source voltage | +20 V |
| Channel dissipation | 20 W |
| Channel temperature | 150 °C |
| Storage temperature | -55 to +150 °C |
The device is suitable for switching regulators and DC-DC converters.
No, the 2SJ319 series has no secondary breakdown.