This document describes the application, features, and characteristics of the 2SJ278 Silicon P-Channel MOS FET, including high-speed power switching.
This document is a technical datasheet for the Hitachi 2SJ278 Silicon P-Channel MOS FET. It describes the device as suitable for high-speed power switching applications such as switching regulators and DC-DC converters. Key features include low on-resistance, high speed switching, and the ability to be driven from a 5V source.
The device is suitable for use in switching regulators and DC-DC converters.
The maximum channel temperature is 150 °C.