2SJ221 is a silicon P-Channel MOSFET designed for high-speed power switching applications. It features low on-resistance, high speed switching, low drive current, and can be driven from a 5V source. It is suitable for motor drive, DC-DC converter, power switch, and solenoid drive applications.
The document is a technical specification sheet for the Hitachi 2SJ221, a Silicon P-Channel MOS Field Effect Transistor (FET). It highlights features such as low on-resistance and high-speed switching capabilities suitable for motor drives and DC-DC converters. The device operates with a gate drive voltage of up to 5V.
| Channel dissipation | 75 W |
|---|
The absolute maximum drain current is -20 A.
Yes, it can be driven from a 5 V source.
The channel temperature must not exceed 150 °C.