2SJ247 Silicon P-Channel MOS FET is used for high speed power switching, with features of low on-resistance, high speed switching, low drive current, and suitable for switching regulator, DC-DC converter.
The document is a technical specification sheet for the Hitachi 2SJ247, a Silicon P-Channel MOS FET designed for high-speed power switching applications. Key features include low on-resistance and suitability for use in switching regulators and DC-DC converters with a 4V gate drive capability.
| Channel dissipation | 40 W |
|---|---|
| Package type | TO-220AB |
Yes, the document states it is suitable for switching regulator and DC-DC converter applications.
The absolute maximum rating for the drain current (Id) is -8 A.
The channel dissipation (Pch) is rated at a maximum of 40 W when the ambient temperature is 25°C.
The channel temperature (Tch) must not exceed 150 °C under absolute maximum conditions.