2SJ218 is a high-performance power switching device with low on-resistance, high switching speed, 4V gate drive device, can be driven by 5V source, suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.
This document is a technical datasheet for the Hitachi 2SJ218, a Silicon P-Channel MOS FET designed for high-speed power switching applications. Key features include low on-resistance, suitability for motor drives and DC-DC converters, and operation with a 4V gate drive device.
The document provides comprehensive electrical specifications at Ta = 25°C, including breakdown voltages, leakage currents, on-state resistance, capacitance values, and switching times. It also lists absolute maximum ratings such as drain current and channel temperature limits.
| Drain to source voltage (Voss) | -60 V |
|---|---|
| Gate to source voltage (Vgs) | +20 V |
| Drain current (Ib) | -45 A |
| Channel dissipation (Poh) | 60 W |
| Channel temperature (Teh) | 150 °C |
| Static drain to source on state resistance (Rds(on)) | Max 0.06 Ohm |
| Input capacitance (Ciss) | 33800 pF |
The device can be driven from a 5 V source.
No, Hitachi's products are not authorized for use in medical applications without written consent.
The storage temperature range is -55 to +150 °C.