This document describes the application and features of 2SJ248 Silicon P-Channel MOS FET, including low on-resistance, high speed switching, low drive current, etc. It is suitable for switching regulator, DC-DC converter.
This document is a technical datasheet for the Hitachi 2SJ248, a Silicon P-Channel MOS Field Effect Transistor (MOSFET). It is designed for high-speed power switching applications such as switching regulators and DC-DC converters. Key features include low on-resistance, high speed switching, and low drive current requirements.
| Drain to source voltage | -100 V |
|---|---|
| Gate to source voltage | +20 V |
| Channel dissipation | 25 W |
| Package type | TO-220FM |
The absolute maximum rating for drain current (Id) is -8 A.
The channel dissipation (Pch) is rated for 25 W when the case temperature is 25°C.
The package measures 10.0 mm in length, 7.0 mm in width, and 3.2 mm in height.