The document describes the Hitachi 2SJ220(L) and 2SJ220(S) as Silicon P-Channel MOS FETs designed for high-speed power switching applications. Key features include low on-resistance, high speed switching, and low drive current requirements suitable for a 4V gate drive device.
The text lists specific applications such as motor drives, DC-DC converters, power switches, and solenoid drives. It provides detailed tables for absolute maximum ratings and electrical characteristics measured at Ta=25°C.
| Drain-Source Voltage Voss | 60 V |
|---|---|
| Gate Source Voltage Vass | +20 V |
| Drain Current Io | -20 A |
| Drain Peak Current Tocetees | 80 A |
| Channel Dissipation TP ye | 45 W |
| Channel Temperature Ta | 150 C |
The absolute maximum rating for the drain current (Io) is -20 A.
The device can operate with a channel temperature up to 150°C.