2SJ217 is a P-channel MOSFET with low on-resistance, high switching speed, low drive current, etc. It is suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.
This document is a technical datasheet for the Hitachi 2SJ217, a Silicon P-Channel MOS FET designed for high-speed power switching applications. Key features include low on-resistance, high speed switching, and suitability for motor drives and DC-DC converters.
The datasheet provides comprehensive electrical characteristics at Ta = 25°C, including breakdown voltages, leakage currents, and capacitance values. It also details absolute maximum ratings such as drain current and channel temperature limits.
| Drain to source voltage (Vdss) | -60 V |
|---|---|
| Gate to source voltage (Vgss) | +20 V |
| Drain current (Id) | -45 A |
| Channel dissipation (Pch) | 150 W |
| Channel temperature (Tch) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
| Package type | TO-3P WN |
The absolute maximum rating for the drain current (Id) is -45 A.
Yes, it is described as a 4V gate drive device that can be driven from a 5 V source.
The channel temperature (Tch) limit is 150 °C, and the storage temperature range is -55 to +150 °C.