Hitachi 2SJ222 Silicon P-Channel MOS FET Datasheet

The 2SJ222 is a P-channel MOSFET from NXP that is suitable for motor drives, DC-DC converters, power switches and solenoid drives. The device features low on-resistance, high switching speed, low drive current and 4 V gate drive capability, which can be driven from a 5 V source.


Hitachi 2SJ222 Silicon P-Channel MOS FET Datasheet - cover page
Brand
Hitachi
Category
MOSFET
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
29 KB
Published
07 June, 2012
Updated
30 September, 2023
MD5 checksum
EF4A8E2C64B4EFA815CE02398838AAA7

About this manual

The document is a technical specification sheet for the Hitachi 2SJ222, a high-speed power switching Silicon P-Channel MOS FET. It details the device's suitability for motor drives and DC-DC converters, highlighting features such as low on-resistance and low drive current requirements.

What's inside

  • Features
  • Outline
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Channel Dissipation
  • Maximum Safe Operation Area
  • Mechanical Dimensions

Specifications

Channel dissipation (Pch)35 W
Package typeTO-220FM

Frequently asked questions

What are the applications for this MOSFET?

It is suitable for motor drive, DC-DC converter, power switch and solenoid drive.

What is the gate drive voltage requirement?

It can be driven from a 5 V source as a 4V gate drive device.

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