This document is a technical datasheet for the Toshiba 2SJ107, a silicon P-channel junction type field effect transistor. It specifies applications including audio amplifiers, analog switches, constant current sources, and impedance converters.
The datasheet provides maximum ratings such as a gate-drain voltage of 25V and a drain power dissipation of 200mW. It also details electrical characteristics like input capacitance, reverse transfer capacitance, and on-resistance under various test conditions.
| Gate-Drain Voltage | 25 V |
|---|---|
| Drain Power Dissipation | 200 mW |
| Junction Temperature | 125 °C |
| Gate Cut-off Current (Max) | 1.0 nA |
| Drain Current (Typical) | -26 mA |
| Gate-Source Cut-off Voltage (Max) | 2.0 V |
| Input Capacitance (Typical) | 105 pF |
| Drain-Source ON Resistance (Typical) | 40 Ω |
It is intended for use in audio amplifiers, analog switches, constant current sources, and impedance converters.
The maximum junction temperature rating is 125 °C.