This document describes the features and characteristics of the products from supplier 2SJ344.
This document is a technical datasheet for the Toshiba 2SJ344, a silicon P-channel enhancement-mode field effect transistor. It is designed for high-speed switching and analog switch applications.
The datasheet provides comprehensive specifications including maximum ratings such as a drain-source voltage of -50V and a DC drain current of -50mA. Key electrical characteristics like gate threshold voltage, on-resistance, and capacitance are listed with typical values at 25°C.
| Drain-Source Voltage (Vds) | -50 V |
|---|---|
| Gate-Source Voltage (Vgss) | -7 V |
| DC Drain Current (Id) | -50 mA |
| Drain Power Dissipation (Pd) | 100 mW |
| Channel Temperature (Tch) | 150 °C |
| Gate Threshold Voltage (Vth) Min. | -0.8 V |
| Gate Threshold Voltage (Vth) Max. | -2.5 V |
| Drain-Source ON Resistance (Rds(ON)) Max. | 50 Ω |
The maximum rated drain-source voltage is -50 V.
The typical gate threshold voltage ranges from -0.8 to -2.5 V.
The weight of the device is 0.006g.