This document is a technical datasheet for the TOSHIBA 2SJ338, a silicon P-channel field-effect transistor. It specifies that the device is designed for audio frequency power amplifier applications as well as industrial uses.
The datasheet provides comprehensive electrical specifications including maximum ratings such as a drain-source voltage of -180V and a drain current of -1A. It also lists detailed electrical characteristics like gate leakage current, breakdown voltages, and capacitance values under specific test conditions.
| Power Dissipation (Pc) | 20 W |
|---|---|
| Channel Temperature (Tch) | 150 °C |
| Forward Transfer Admittance ([Yfs]) | 0.7 S (Typ.) |
The document states that the device is intended for use in audio frequency power amplifiers and industrial applications.
The maximum rated drain current is 1 A.
At a case temperature of 25°C, the maximum power dissipation is 20 W.